Nuclear Tracks Morphology Study Using Raman Methodology

Mariana  Cerda Z.; J. A.  Azamar-Barrios; C.  Vazquez-Lopez; R.  Fragoso-Soriano; B. E.  Zendejas-Leal; J.  Rurik-Farias; J. I.  Golzarri; G.  Espinosa

doi:10.15415/jnp.2016.41023

Authors

Mariana Cerda Z. Departamento de Física Aplicada, Centro de Investigación y de Estudios Avanzados del IPN, Unidad Mérida.
J. A. Azamar-Barrios Departamento de Física Aplicada, Centro de Investigación y de Estudios Avanzados del IPN, Unidad Mérida.
C. Vazquez-Lopez Departamento de Física. Centro de Investigación y de Estudios Avanzados del IPN, Ciudad de México
R. Fragoso-Soriano Departamento de Física. Centro de Investigación y de Estudios Avanzados del IPN, Ciudad de México
B. E. Zendejas-Leal Departamento de Física. Centro de Investigación y de Estudios Avanzados del IPN, Ciudad de México
J. Rurik-Farias Instituto de Ingeniería y Tecnología Universidad Autónoma de Cd. Juárez, Chih.
J. I. Golzarri Instituto de Física. Universidad Nacional Autónoma de México. Circuito de la Investigación Científica, Ciudad Universitaria. 04520, Ciudad de México
G. Espinosa Instituto de Física. Universidad Nacional Autónoma de México. Circuito de la Investigación Científica, Ciudad Universitaria. 04520, Ciudad de México

DOI:

https://doi.org/10.15415/jnp.2016.41023

Keywords:

Micro-Raman spectroscopy, CR-39 SSNTD, Track morphology

Abstract

In this work, a new methodology for rendering profiles of etched nuclear tracks is presented, using confocal micro-Raman spectrometry instrumentation. The precise profile of etched nuclear tracks with normal and/or angular incidence of the particle can be determined in few minutes, with a great visual and numerical resolution, that means a quantitative and qualitative simultaneous chemical and morphology characterization with the Raman technique. The Raman image routine is designed to acquire at each image pixel a complete Raman spectrum. This is a mapping of the functional groups that form the polymeric structure, which may be broken by the damage caused by the incident radiation and/or the etching process.

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