HOLLIDAY, R. L. .; YOUNG, J. M. .; SINGH, S. .; MCDANIEL, F. D. .; ROUT, B. . Feasibility of Formation of Ge1-x-y Six Sny Layers With High Sn Concentration via Ion Implantation. Journal of Nuclear Physics, Material Sciences, Radiation and Applications, [S. l.], v. 7, n. 2, p. 65–70, 2020. DOI: 10.15415/jnp.2020.72006. Disponível em: https://jnp.chitkara.edu.in/index.php/jnp/article/view/203. Acesso em: 21 jul. 2024.